Noise and power characteristics of AlGaAs/lnGaAs/GaAs PHEMT with two planar doping layers

Journal of the Korean Physical Society

Volumn 35, Issue SUPPL. 4, 1999, Pages

  Lee, Jin Hee ^a   Lee, Chul Wook ^a   Yoon, Hyung Sup ^a   Maeng, Sung Jae ^a   Lee, Kyung Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033259510     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)

1. J.-H. Lee, H.-S. Yoon, C.-S. Park and H.-M. Park, IEEE Electron Devices Letters 16, 271 (1995).
2. J.-H. Lee, H.-S. Yoon, S.-S. Choi and C.-S. Park, ETRI Journal 18, 179 (1996).