High pressure EXAFS on GaTe single crystal including polarization

Physica Status Solidi (B) Basic Research

Volumn 211, Issue 1, 1999, Pages 389-393

  Pellicer Porres, J ^a   Segura, A ^a   San Miguel, A ^b,c   Munoz V ^a  

^a UNIVERSITY OF VALENCIA   (Spain)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033249307     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199901)211:1<389::AID-PSSB389>3.0.CO;2-0     Document Type: Article

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