Raman linewidths of phonons in Si, Ge, and SiC under pressure

Physica Status Solidi (B) Basic Research

Volumn 211, Issue 1, 1999, Pages 293-300

  Ulrich, C ^a   Debernardi, A ^a   Anastassakis, E ^a,b   Syassen, K ^a   Cardona, M ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033249299     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199901)211:1<293::AID-PSSB293>3.0.CO;2-O     Document Type: Article

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