Parameters of Yb-induced deep level in Pb1-xGexTe doped with Yb

Physica Status Solidi (B) Basic Research

Volumn 211, Issue 1, 1999, Pages 171-175

  Skipetrov, E P ^a   Chernova, N A ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033249284     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199901)211:1<171::AID-PSSB171>3.0.CO;2-7     Document Type: Article

References (5)

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3. F. MAHOUKOU, O. DOS SANTOS, C. FAU, S. CHARAR, M. AVEROUS, and Z. GOLACKI, phys. stat. sol. (b) 195, 511 (1996).
4. E.P. SKIPETROV, N.A. CHERNOVA, E.I. SLYNKO, and YU.K. VYGRANENKO, Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekh. 1, 68 (1998).
5. B.A. AKIMOV, R.S. WADHWA, and S.M. CHUDINOV, Sov. Phys. - Semicond. 12, 1146 (1978).