Influence of self-oxide formation regimes on the properties of oxide-p-InSe heterojunctions

Technical Physics Letters

Volumn 25, Issue 7, 1999, Pages 520-521

  Katerinchuk, V N ^a   Kovalyuk, Z D ^a   Zaslonkin, A V ^a  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033246039     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1262539     Document Type: Article

References (8)

1. 1 V. N. Katerinchuk and M. Z. Kovalyuk, Pis'ma Zh. Tekh. Fiz. 18(12), 70 (1992) [Sov. Tech. Phys. Lett. 18, 394 (1992)].
2. V. N. Katerinchuk and M. Z. Kovalyuk, Pis'ma Zh. Tekh. Fiz. 18(12), 70 (1992) [Sov. Tech. Phys. Lett. 18, 394 (1992)].
3. V. N. Katerinchuk and M. Z. Kovalyuk, Pis'ma Zh. Tekh. Fiz. 23(10), 1 (1997) [Tech. Phys. Lett. 23, 377 (1997)].
4. V. N. Katerinchuk and M. Z. Kovalyuk, Pis'ma Zh. Tekh. Fiz. 23(10), 1 (1997) [Tech. Phys. Lett. 23, 377 (1997)].
5. A Chevy, A. Kuhn, and M.-S. Martin, J. Cryst. Growth 38, 118 (1977).
6. A. Chevy, J. Appl. Phys. 56, 978 (1984).
7. G. Micocci, M. Molendini, and A. Tepore, J. Appl. Phys. 70, 6847 (1991).
8. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969; Vol. 1, Nauka, Moscow 1984, 456 pp.).