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Volumn 25, Issue 8, 1999, Pages 598-600

High-power broad-band single-mode InGaAsP/InP superluminescent diode

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EID: 0033242736     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1262568     Document Type: Article
Times cited : (4)

References (16)
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    • (1987) Sov. Phys. Semicond. , vol.21 , pp. 503
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    • N. A. Pikhtin, I. S. Tarasov, and M. A. Ivanov, Fiz. Tekh. Poluprovodn. 28, 1983 (1994) [Semiconductors 28, 1094 (1994)].
    • (1994) Semiconductors , vol.28 , pp. 1094
  • 14
    • 0031496053 scopus 로고    scopus 로고
    • N. A. Pikhtin, A. Yu. Leshko, A. V. Lyutetskiǐ, V. B. Khalfin, N. V. Shuvalova, Yu. V. Il'in, and I. S. Tarasov, Pis'ma Zh. Tekh. Fiz. 23(6), 10 (1997) [Tech. Phys. Lett. 23, 214 (1997)].
    • (1997) Tech. Phys. Lett. , vol.23 , pp. 214
  • 16
    • 3142714120 scopus 로고
    • D. Z. Garbuzov, A. V. Ovchinnikov, N. A. Pikhtin, Z. N. Sokolova, I. S. Tarasov, and V. B. Khalfin, Fiz. Tekh. Poluprovodn. 25, 928 (1991) [Sov. Phys. Semicond. 25, 560 (1991)].
    • (1991) Sov. Phys. Semicond. , vol.25 , pp. 560


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.