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Volumn 215, Issue 1, 1999, Pages 263-267

Pressure tuning of competing charged and neutral exciton states in quasi-2D semiconductor structures

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EID: 0033242152     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199909)215:1<263::AID-PSSB263>3.0.CO;2-O     Document Type: Article
Times cited : (9)

References (9)
  • 6
    • 0003942646 scopus 로고
    • Chaps. 14, 15, World Scientific Publ. Co., Singapore
    • S. ADACHI, GaAs and Related Materials, Chaps. 14, 15, World Scientific Publ. Co., Singapore 1994. O. MADELUNG (Ed.), Semiconductors - Basic Data, Chap. 2, Springer-Verlag, Berlin 1996.
    • (1994) GaAs and Related Materials
    • Adachi, S.1
  • 7
    • 0003685375 scopus 로고    scopus 로고
    • Chap. 2, Springer-Verlag, Berlin
    • S. ADACHI, GaAs and Related Materials, Chaps. 14, 15, World Scientific Publ. Co., Singapore 1994. O. MADELUNG (Ed.), Semiconductors - Basic Data, Chap. 2, Springer-Verlag, Berlin 1996.
    • (1996) Semiconductors - Basic Data
    • Madelung, O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.