Observation of low frequency oscillations in GaAs samples grown by molecular beam epitaxy at low temperatures

Brazilian Journal of Physics

Volumn 29, Issue 4, 1999, Pages 797-800

  Rubinger, R M ^a   De Oliveira, A G ^a   Ribeiro, G M ^a   Soares, D A W ^a,b   Moreira, M V B ^a  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b FEDERAL UNIVERSITY OF ITAJUBÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033234778     PISSN: 01039733     EISSN: None     Source Type: Journal    
DOI: 10.1590/S0103-97331999000400039     Document Type: Article

References (7)

1. [1] G.N. Maracas and D.A. Johnson, Appl. Phys. Lett. 46, 305 (1985).
2. [2] E. Schöll, Phys. Rev. B 34, 1395 (1986).
3. [3] E. Schöll, Phys. Scrip. T29, 152 (1989).
4. [4] C. Backhouse, L. Young: Solid State Electr. 35, 1601 (1992).
5. [5] H.K. Sacks, A.G. Milnes: Int. J. Elect. 28, 565 (1970).
6. [6] S.P. McAlister, Z.-M. Li, D.J. Day: Canadian J. Phys. 69, 207 (1991).
7. [7] V.A. Samulov, proceedings of the Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices, Springer, 220 (1995).