Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures

Semiconductors

Volumn 33, Issue 11, 1999, Pages 1202-1205

  Venger, E F ^a   Kaganovich, E B ^a   Kirillova, S I ^a   Manoilov, E G ^a   Primachenko, V E ^a   Svechnikov, S V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033229240     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187849     Document Type: Article

References (19)

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