Intrinsic Josephson effects in submicrometre Bi2212 mesas fabricated by using focused ion beam etching

Superconductor Science and Technology

Volumn 12, Issue 11, 1999, Pages 1013-1015

  Winkler, D ^a,c   Mros, N ^a   Tarte, E J ^b   Yurgens, A ^a   Krasnov, V M ^a   Foord, D T ^b   Booij, W E ^b   Blamire, M G ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Imego AB The Institute of Micro and Nanotechnology   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ETCHING; MICROMACHINING; OXIDE SUPERCONDUCTORS; SINGLE CRYSTALS; SUPERCONDUCTING TRANSITION TEMPERATURE;

CONDUCTANCE VOLTAGE CHARACTERISTICS; FOCUSED ION BEAM ETCHING; JOSEPHSON EFFECTS; MESAS;

JOSEPHSON JUNCTION DEVICES;

EID: 0033226259     PISSN: 09532048     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-2048/12/11/395     Document Type: Article

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