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Volumn 12, Issue 11, 1999, Pages 874-876

Transport properties of Nb/InAs(2DEG)/Nb Josephson field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON GAS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; NIOBIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SUPERCONDUCTING MATERIALS; TRANSPORT PROPERTIES; TWO DIMENSIONAL;

EID: 0033226239     PISSN: 09532048     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-2048/12/11/354     Document Type: Article
Times cited : (16)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.