Transport properties of Nb/InAs(2DEG)/Nb Josephson field-effect transistors

Superconductor Science and Technology

Volumn 12, Issue 11, 1999, Pages 874-876

  Richter, A ^a   Koch, M ^a   Matsuyama, T ^a   Merkt, U ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON GAS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; NIOBIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SUPERCONDUCTING MATERIALS; TRANSPORT PROPERTIES; TWO DIMENSIONAL;

JOSEPHSON FIELD EFFECT TRANSISTORS; SUPERCONDUCTING NIOBIUM ELECTRODE;

JOSEPHSON JUNCTION DEVICES;

EID: 0033226239     PISSN: 09532048     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-2048/12/11/354     Document Type: Article

References (4)

1. Octavio M, Tinkham M, Blonder G E and Klapwijk T M 1983 Phys. Rev. B 27 6739-46
2. Engelhardt A, Dittmann R and Braginski A I 1999 Phys. Rev. B 59 3815
3. Takayanagi H and Kawakami T 1985 Phys. Rev. Lett. 54 2449
4. Aminov B A, Golubov A A and Kupriyanov M Yu 1996 Phys. Rev. B 53 365-73