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Volumn 12, Issue 11, 1999, Pages 874-876
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Transport properties of Nb/InAs(2DEG)/Nb Josephson field-effect transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRODES;
ELECTRON GAS;
FIELD EFFECT TRANSISTORS;
HETEROJUNCTIONS;
NIOBIUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
SUPERCONDUCTING MATERIALS;
TRANSPORT PROPERTIES;
TWO DIMENSIONAL;
JOSEPHSON FIELD EFFECT TRANSISTORS;
SUPERCONDUCTING NIOBIUM ELECTRODE;
JOSEPHSON JUNCTION DEVICES;
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EID: 0033226239
PISSN: 09532048
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-2048/12/11/354 Document Type: Article |
Times cited : (16)
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References (4)
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