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Volumn 43, Issue 11, 1999, Pages 2047-2055

Semi-empirical simulation model for polycrystalline thin film transistors

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC PROPERTIES; LINEAR INTEGRATED CIRCUITS; LIQUID CRYSTAL DISPLAYS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE MODELS; SENSORS; THIN FILM CIRCUITS;

EID: 0033225345     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00188-4     Document Type: Article
Times cited : (8)

References (15)
  • 2
    • 0031029041 scopus 로고    scopus 로고
    • X-ray detectors for digital radiography
    • Yaffe M.J., Rowlands J.A. X-ray detectors for digital radiography. Phys. Med. Biol. 42:1997;1-39.
    • (1997) Phys. Med. Biol. , vol.42 , pp. 1-39
    • Yaffe, M.J.1    Rowlands, J.A.2
  • 4
    • 0342584476 scopus 로고    scopus 로고
    • Beyond the portable computer
    • Striegler T.D. Beyond the portable computer. Inf. Display. 8:1996;10-12.
    • (1996) Inf. Display , vol.8 , pp. 10-12
    • Striegler, T.D.1
  • 7
    • 0020796133 scopus 로고
    • Effects of grain boundaries on the channel conductance of SOI MOSFETs
    • Fossum J.G., Ortiz-Conde A. Effects of grain boundaries on the channel conductance of SOI MOSFETs. IEEE Trans. Electron Devices. ED-30:(8):1983;933-940.
    • (1983) IEEE Trans. Electron Devices , vol.30 , Issue.8 , pp. 933-940
    • Fossum, J.G.1    Ortiz-Conde, A.2
  • 8
    • 84918044850 scopus 로고
    • Characteristics of the metal-oxide-semiconductor transistor
    • Sah C.T. Characteristics of the metal-oxide-semiconductor transistor. IEEE Trans. Electron Devices. ED-11:(7):1964;324-345.
    • (1964) IEEE Trans. Electron Devices , vol.11 , Issue.7 , pp. 324-345
    • Sah, C.T.1
  • 9
    • 84937744575 scopus 로고
    • Modelling and simulation of insulated-gate field effect transistor switching circuits
    • Shichman H., Hodges D.A. Modelling and simulation of insulated-gate field effect transistor switching circuits. IEEE Journal of Solid State Circuits. SC-3:(3):1968;285-289.
    • (1968) IEEE Journal of Solid State Circuits. , vol.3 , Issue.3 , pp. 285-289
    • Shichman, H.1    Hodges, D.A.2
  • 10
    • 0026138465 scopus 로고
    • Simple MOSFET model for circuit analysis
    • Sakurai T., Newton A.R. Simple MOSFET model for circuit analysis. IEEE Trans. Electron Devices. ED-38:(4):1991;887-893.
    • (1991) IEEE Trans. Electron Devices , vol.38 , Issue.4 , pp. 887-893
    • Sakurai, T.1    Newton, A.R.2
  • 11
    • 0032662443 scopus 로고    scopus 로고
    • Extraction of the trap density and mobility in poly-CdSe thin films
    • Lee M.J., Lee S.C. Extraction of the trap density and mobility in poly-CdSe thin films. Solid State Electronics. 43:1999;833-838.
    • (1999) Solid State Electronics , vol.43 , pp. 833-838
    • Lee, M.J.1    Lee, S.C.2
  • 12
    • 0026237181 scopus 로고
    • A single-piece C∞-continuous MOSFET model including subthreshold conduction
    • McAndrew C.C., Bhattacharyya S.B., Wing O. A single-piece C∞-continuous MOSFET model including subthreshold conduction. IEEE Electron Device Lett. EDL-12:(10):1991;565-567.
    • (1991) IEEE Electron Device Lett. , vol.12 , Issue.10 , pp. 565-567
    • McAndrew, C.C.1    Bhattacharyya, S.B.2    Wing, O.3
  • 14
    • 85031591444 scopus 로고    scopus 로고
    • University of Stuttgart, private communication
    • Harrer T. University of Stuttgart, private communication.
    • Harrer, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.