Effects of high temperature annealing of aluminum at the back of n+-p-p+ silicon solar cells upon their spectral and electrical characteristics

Solid-State Electronics

Volumn 43, Issue 11, 1999, Pages 2075-2079

  Morales Acevedo, Arturo ^a   Santana, Guillermo ^a   Martel, Andrés ^a   Hernández, Luis ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; CARRIER MOBILITY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; OHMIC CONTACTS; SHORT CIRCUIT CURRENTS;

ALUMINUM THERMAL TREATMENT; CARRIER RECOMBINATION; GETTERER; OPEN CIRCUIT VOLTAGE;

SILICON SOLAR CELLS;

EID: 0033225205     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00175-6     Document Type: Article

References (8)

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