Growth and characterization of thick Si-doped AlGaN epilayers on sapphire substrates

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 379-384

  Lundin, W V ^a   Usikov, A S ^a   Sakharov, A V ^a   Tretyakov, V V ^a   Poloskin, D V ^a   Ledentsov, N N ^b   Hoffmann, A ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; NUCLEATION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

ALUMINUM GALLIUM NITRIDES; MOLE FLOW RATIO;

SEMICONDUCTING FILMS;

EID: 0033222019     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<379::AID-PSSA379>3.0.CO;2-V     Document Type: Article

References (3)

1. A. V. SAKHAROV, W. V. LUNDIN, A. S. USIKOV, YU. A. KUDRIAVTSEV, A. V. LUNEV, Y. M. SHERNIAKOV, and N. N. LEDENTSOV, MRS Internet J. Nitride Semicond. Res. 3, 28 (1998).
2. W. V. LUNDIN, A. S. USIKOV, I. L. KRESTNIKOV, A. V. SAKHAROV, A. F. TSATSUL'NIKOV, M. V. BAIDAKOVA, D. V. POLOSKIN, V. V. TRET'IAKOV, and N. N. LEDENTSOV, Booklet of the 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, Prague, June 8-11, 1999 (p. 49-52).
3. I. L. KRESTNIKOV, W. V. LUNDIN, A. V. SAKHAROV, V. A. SEMENOV, A. S. USIKOV, A. F. TSATSUL'NIKOV, ZH. I. ALFEROV, N. N. LEDENTSOV, A. HOFFMANN, and D. BIMBERG, Appl. Phys. Lett. 75, 1192 (1999).