Tapered air apertures for thermally robust VCL structures

IEEE Photonics Technology Letters

Volumn 11, Issue 11, 1999, Pages 1339-1341

  Naone, Ryan L ^a   Coldren, Larry A ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE OPERATIONS; MULTILAYERS; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

AIR APERTURES; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

QUANTUM WELL LASERS;

EID: 0033221863     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.803038     Document Type: Article

References (7)

1. E. R. Hegblom, N. M. Margalit, A. Fiore, and L. A. Coldren, "Small efficient vertical cavity lasers with tapered oxide apertures," Electron. Lett., vol. 34, pp. 895-897, 1998.
2. R. L. Naone, P. D. Floyd, D. B. Young, E. R. Hegblom, T. A. Strand, and L. A. Coldren, "Interdiffused quantum wells for lateral carrier confinement in VCSEL's," IEEE J. Select. Topics Quantum Electron., vol. 4, pp. 706-714, 1998.
3. D. G. Deppe and N. Holonyak, Jr., "Atom diffusion and impurity-induced layer diffusion disordering in quantum well III-V semiconductor heterostructures," J. Appl. Phys., vol. 64, pp. R93-R113, 1988.
4. 1-cursive Greek chi As-AlAs-GaAs quantum well heterostructures and superlattices," Appl. Phys. Lett., vol. 57, pp. 2844-2846, 1990.
5. W.-Y. Hwang, D. L. Miller, Y. K. Chen, and D. A. Humphrey, "Carbon doping of InGaAs in solid-source molecular beam epitaxy using carbon tetrabromide," J. Vac. Sci. Technol B, vol. 12, pp. 1193-1196, 1994.
6. J. W. Scott, B. J. Thiebault, D. B. Young, and L. A. Coldren, "High efficiency submilliamp vertical cavity lasers with intracavity contacts," IEEE Photon. Technol. Lett., vol. 6, pp. 678-680, 1994.
7. E. F. Schubert, Doping in III-V Semiconductors, 1st ed. Cambridge, U.K.: Cambridge Univ. Press, 1993.