Classical and quantum simulations of In and Al incorporation in GaN

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 257-261

  Chisholm, J A ^a   Bristowe, P D ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BINDING ENERGY; INDIUM; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MANUFACTURE;

SUBSTITUTIONAL ATOMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221696     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<257::AID-PSSA257>3.0.CO;2-E     Document Type: Article

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