Dynamics of electromigration induced void/hillock growth and precipitation/dissolution of addition elements studied by in-situ scanning electron microscopy resistance measurements

Microelectronics Reliability

Volumn 39, Issue 11, 1999, Pages 1617-1630

  D'Haen, J ^a   Cosemans, P ^a   Manca, J V ^a   Lekens, G ^a   Martens, T ^b   De Ceuninck, W ^a   D'Olieslaeger, M ^a   De Schepper, L ^a   Maex, K ^c  

^a HASSELT UNIVERSITY   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DISSOLUTION; ELECTRIC RESISTANCE MEASUREMENT; ELECTROMIGRATION; GROWTH (MATERIALS); PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY;

VOID/HILLOCK GROWTH;

MICROELECTRONICS;

EID: 0033221259     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00169-9     Document Type: Article

References (12)

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