Near-field measurements of VLSI devices

IEEE Transactions on Electromagnetic Compatibility

Volumn 41, Issue 4 PART 1, 1999, Pages 374-384

  Slattery, Kevin P ^a   Neal, Jeffrey W ^b   Cui, Wei ^c  

^a MIS International   (United States)

^b DAIMLER AG   (Germany)

^c MISSOURI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (United States)

Author keywords

Near field; VLSI

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; ELECTROMAGNETIC FIELD MEASUREMENT; MICROPROCESSOR CHIPS; MULTICHIP MODULES; VLSI CIRCUITS;

NEAR-FIELD MEASUREMENT;

ELECTROMAGNETIC COMPATIBILITY;

EID: 0033220953     PISSN: 00189375     EISSN: None     Source Type: Journal    
DOI: 10.1109/15.809825     Document Type: Article

References (4)

1. Ctr. Superconductivity Res., Univ. Maryland, "Microwave scope images device fields," Electronic Engineering Times, Feb. 1998.
2. T. P. Budka, "Near field mapping above a coupled-line filter and a MMIC," Microwave J., vol. 41, no. 3, Mar. 1998.
3. K. P. Slattery, J. Neal, and S. Smith, "A description of the construction and implementation of an automated conducted emissions chamber for automotive testing," in IEEE EMC Symp., Denver, CO, Aug. 1998.
4. J. P. Muccioli, T. North, and K. Slattery, "Characterization of the RF emissions from a family of microprocessors using a 1 GHz TEM cell," in IEEE EMC Symp., Austin, TX, Aug. 1997.