Study on silicon melt convection during the RF-FZ crystal growth process. I. Experimental flow visualization

Journal of Crystal Growth

Volumn 206, Issue 1-2, 1999, Pages 23-26

  Munakata, Tetsuo ^a   Tanasawa, Ichiro ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Tokyo University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTROMAGNETIC FIELD EFFECTS; FLOW VISUALIZATION; HEAT CONVECTION; MELTING; SILICON; VELOCIMETERS; VELOCITY MEASUREMENT; X RAY RADIOGRAPHY;

FLOATING ZONE; PARTICLE TRACKING VELOCIMETRY; RADIO FREQUENCY HEATING; SILICON MELT CONVECTION;

CRYSTAL GROWTH FROM MELT;

EID: 0033207887     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00319-X     Document Type: Article

References (11)

1. Tao Y., Sakidja R., Kou S. Int. J. Heat Mass Transfer. 38:1995;503.
2. Vanek P., Kadecková A., Jurisch M., Löser W. J. Crystal Growth. 63:1983;191.
3. Mühlbauer A., Erdmann W., Keller W. J. Crystal Growth. 64:1983;529.
4. Mühlbauer A., Muiznieks A., Virbulis J., Lüdge A., Riemann H. J. Crystal Growth. 151:1995;66.
5. Riahi D.N., Walker J.S. J. Crystal Growth. 94:1989;635.
6. Lie K.H., Walker J.S., Riahi D.N. J. Crystal Growth. 100:1990;450.
7. Nakamura S., Kakimoto K., Hibiya T. Ratke L., Walter H., Feurbacher B. Materials and Fluids Under Low Gravity. 1995;343 Springer, Berlin.
8. Kakimoto K., Eguchi M., Watanabe H., Hibiya T. J. Crystal Growth. 88:1988;365.
9. Watanabe M., Eguchi M., Kakimoto K., Baros Y., Hibiya T. J. Crystal Growth. 128:1993;288.
10. Munakata T., Tanasawa I. J. Crystal Growth. 206:1999;27.
11. Munakata T., Tanasawa I. J. Crystal Growth. 106:1990;566.