Mathematical model simulating the growth of compound semiconductor thin films via chemical bath deposition

Journal of Crystal Growth

Volumn 206, Issue 1-2, 1999, Pages 68-74

  Nair, P K ^a   Parmananda, P ^b   Nair, M T S ^a  

^a INSTITUTO DE ENERGÍAS RENOVABLES   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DISSOCIATION; FILM GROWTH; IONS; MATHEMATICAL MODELS; METALS; NUCLEATION; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SUBSTRATES; SULFUR COMPOUNDS; THERMAL EFFECTS;

BATCH PRODUCTION; CHEMICAL BATH DEPOSITION; COMPOUND SEMICONDUCTOR THIN FILMS; DILUTE BATH; GROWTH PHASE; METAL IONS; NUCLEATION PHASE; TERMINAL PHASE;

THIN FILMS;

EID: 0033207469     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00287-0     Document Type: Article

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