ATLAS irradiation studies of n-in-n and p-in-n silicon microstrip detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 435, Issue 1-2, 1999, Pages 74-79

  Allport, P ^a   Andricek, L ^b   Buttar, C ^c   Carter, J ^d   Drage, L ^d   Ferrere D ^e   Morgan, D ^c   Riedler, P ^f   Robinson, D ^d  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e UNIVERSITY OF GENEVA   (Switzerland)

^f CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; IRRADIATION; LEAKAGE CURRENTS; MICROSTRIP DEVICES; SIGNAL TO NOISE RATIO; SILICON SENSORS; VOLTAGE MEASUREMENT;

ATLAS DETECTOR; CHARGE COLLECTION EFFICIENCY; SILICON MICROSTRIP DETECTORS;

RADIATION DETECTORS;

EID: 0033207315     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00413-1     Document Type: Article

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