Diamond thin film grown homoepitaxially on diamond (001) substrate by microwave plasma CVD method studied by reflection high-energy electron diffraction and atomic force microscopy

Surface Science

Volumn 440, Issue 1-2, 1999, Pages 103-115

  Takami, T ^a,b   Suzuki, K ^a   Kusunoki, I ^a,b   Sakaguchi, I ^b   Nishitani Gamo, M ^b   Ando, T ^b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL SYMMETRY; EPITAXIAL GROWTH; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE STRUCTURE; SYNTHESIS (CHEMICAL); TWINNING;

KIKUCHI PATTERNS; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTAL EPITAXY; SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION;

DIAMOND FILMS;

EID: 0033207216     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00772-4     Document Type: Article

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