Characteristics of InAlGaAs/InAlAs superlattice avalanche photodiodes for ultra-low optical power detection in the near infrared

Optical Review

Volumn 6, Issue 5, 1999, Pages 459-463

  Saito, Yasunori ^a   Maruyama, Tomoyuki ^b   Yamaki, Hideaki ^a,c   Kobayashi, Fumitoshi ^a   Kawahara, Takuya D ^a   Nomura, Akio ^a   Tanaka, Mitsuyoshi ^b  

^a SHINSHU UNIVERSITY   (Japan)

^b Hioki E E Corporation   (Japan)

^c Konica Corporation   (Japan)

Author keywords

Avalanche photodiode; Dark current; InAlGaAs InAlAs; Near infrared; Superlattice; Ultra low optical power

Indexed keywords

EID: 0033197413     PISSN: 13406000     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10043-999-0459-8     Document Type: Article

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