First epitaxial pnp bipolar transistor on diamond with deep nitrogen donor

Electronics Letters

Volumn 35, Issue 20, 1999, Pages 1777-1779

  Aleksov, A ^a   Denisenko, A ^a   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTAL DEFECTS; NITROGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SYNTHETIC DIAMONDS;

BORON ACCEPTORS; NITROGEN DONOR;

BIPOLAR TRANSISTORS;

EID: 0033195441     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991201     Document Type: Article

References (5)

1. PAN, L., and KANIA, D. (Eds.): 'Diamond: electronic properties and applications' (Kluwer Academic Publishers, Boston, 1995), p. 472
2. PRINS, J.F.: Appl. Phys. Lett., 1982, 41, pp. 950
3. KOHN, E., and EBERT, W.: 'Electronic devices on CVD diamond' in DISCHLER, B. and WILD, C. (Eds.): 'Low pressure synthetic diamond' (Springer-Verlag, Berlin-Heidelberg, 1998)
4. BERGMAIER, A., and DOLLINGER, G.: 'Detection of nitrogen in CVD diamond', Diamond Related Mater., 1996, 5, pp. 995-997
5. EDGAR, J.H., et al. (Eds.): 'Gallium nitride and related semiconductors' (INSPEC, London, 1999)