Electrical characterization of the amorphous SiC-pSi structure

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 265-268

  Lysenko, V S ^a   Tyagulski, I P ^a   Gomeniuk, Y V ^a   Osiyuk, I N ^a   Mikhnov, A K ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BAND STRUCTURE; ELECTRON TRAPS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

POOLE-FRENKEL EMISSIONS; POTENTIAL BARRIERS; VALENCE BANDS;

HETEROJUNCTIONS;

EID: 0033190202     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00385-8     Document Type: Article

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