X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 43-46

  Houssa, M ^a   De Gendt, S ^a   De Bokx, P ^b   Mertens, P W ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRAPS; GATES (TRANSISTOR); MOS DEVICES; OXIDES; PERCOLATION (SOLID STATE); SEMICONDUCTING SILICON COMPOUNDS; SILICA; ULTRATHIN FILMS;

OXYNITRIDES; ULTRATHIN GATE OXIDES; X RAY IRRADIATION EFFECTS;

SEMICONDUCTING FILMS;

EID: 0033190124     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00334-2     Document Type: Article

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