Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation

Materials Letters

Volumn 40, Issue 5, 1999, Pages 235-239

  Tseng, Wen F ^a   Monk, David H ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; HIGH ELECTRON MOBILITY TRANSISTORS; ION IMPLANTATION; LEAKAGE CURRENTS; POINT DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

ALUMINUM GALLIUM ARSENIDE; FOCUSED ION BEAM TECHNIQUE; GATE LEAKAGE; INDIUM GALLIUM ARSENIDE; SUBTHRESHOLD TRANSFER CHARACTERISTICS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033189881     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(99)00081-6     Document Type: Article

References (10)

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