Theoretical studies of the g factor of V3+ in III-V semiconductors

Semiconductor Science and Technology

Volumn 14, Issue 9, 1999, Pages 883-885

  Zheng, W C ^a,b   Wu, S Y ^a,b   Li, W ^a  

^a SICHUAN UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PARAMAGNETIC RESONANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTRUM ANALYSIS;

G FACTOR; LIGAND IONS; SEMICONDUCTING GALLIUM PHOSPHIDE; TWO SPIN ORBIT COUPLING PARAMETER MODEL;

POSITIVE IONS;

EID: 0033189603     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/9/323     Document Type: Article

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