Far infrared modulated photoluminescence (FIRM-PL) study of cyclotron resonance in a 2D electron gas in GaAs/AlxGa1-xAs heterojunctions

Semiconductor Science and Technology

Volumn 14, Issue 9, 1999, Pages 768-774

  Chang, C C ^a   Nicholas, R J ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; ELECTRON ENERGY LEVELS; ELECTRON GAS; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INFRARED RADIATION; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; TWO DIMENSIONAL;

FAR INFRARED MODULATED PHOTOLUMINESCENCE; LANDAU LEVEL FILLING FACTOR; PHOTOLUMINESCENCE INTENSITY; POWER DEPENDENCE;

CYCLOTRON RESONANCE;

EID: 0033189139     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/9/305     Document Type: Article

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