Deposition of tungsten by plasma enhanced chemical vapour deposition

Journal De Physique. IV : JP

Volumn 9 pt 2, Issue 8, 1999, Pages

  Bain, M F ^a   Armstrong, B M ^a   Gamble, H S ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; TEMPERATURE; TITANIUM; TUNGSTEN COMPOUNDS;

POLYCRYSTALLINE BETA PHASE TUNGSTEN; SELF LIMITING THICKNESS; TITANIUM FLUORIDE;

TUNGSTEN;

EID: 0033188016     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:19998105     Document Type: Article

References (14)

1. Yamamoto N., Journal of the Electrochemical Society, 133, (1986), 401.
2. Shen B.W., Smith G.C., Anthony J.M., Mutyi R.J., Journal of Vacuum Science & Technology B, 4, (1986), 1369.
3. Sze S.M., (Physics of Semiconductor Devices J Wiley & Son ltd, New York, 1981)
4. Tang C.C., Chu J. K. and Hess D. W., Solid Stale Technology, 26, (1983), 125.
5. Wood J., Applied Surface Science, 38, (1989), 397.
6. Hodson C. M. T. and Wood J., Electronic Letters, 23, (1987), 733
7. Hess D. W. in: Tungsten and Other Refractory Metals for VLSI Application 1985. Ed. R.S. Blewer (Materials Research Society. Pittsburgh, 1986) p 105.
8. Busta H.H. and Tang C.H., Journal of the Electrochemical Society, 133, (1986), 1195.
9. Hagg G and Schomber N, Acta Crystallogra, 7, (1954), 351.
10. Tang C.C. and Hess D.W., Applied Physics Letters, 45, (1984), 633.
11. Bain M. unpublished reference
12. Broadbent E.K., Morgan A.E., DeBlasi J.M, Van der Putte P., Coulman B., Burrow B.J. and Sadana D.K., Journal of the Electrochemical Society: Solid State Science and Technology, 133, (1986), 1715.
13. Alugin D., Favreaud D., Kostelnick D., Olasupo K and Shimer J., Journal of Material Research Society Symposium Proceedings VLSI 1990, 69.
14. Moriya T., Shira S., Hazuki Y., Chiba M., Kashiwagi M., IEDM Technology Dig. CH 1973-77 83 (1983), 550.