PLD growth of stoichiometric Fe3O4 thin films for spin tunneling devices

IEEE Transactions on Magnetics

Volumn 35, Issue 5 PART 1, 1999, Pages 3046-3048

  Kiyomura, T ^a   Gomi, M ^a   Maruo, Y ^a   Toyoshima, H ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Half metallic materials; Pulsed laser deposition; Spin tunneling devices; Stoichiometric feso4 thin film

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; EPITAXIAL GROWTH; FILM GROWTH; IRON OXIDES; MAGNESIA; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; STOICHIOMETRY; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

PULSED LASER DEPOSITION (PLD); SPIN TUNNELING DEVICES;

MAGNETIC THIN FILMS;

EID: 0033184401     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.801080     Document Type: Article

References (4)

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