Light-induced porous silicon photoluminescence quenching

Journal of Luminescence

Volumn 82, Issue 3, 1999, Pages 205-211

  Gelloz, B ^a   Bsiesy, A ^b   Herino, R ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTALS; DIFFUSION; ELECTROCHEMISTRY; ELECTROLUMINESCENCE; ELECTROLYTES; ELECTRON TRANSPORT PROPERTIES; PHOTOCURRENTS; POROUS SILICON; PROTONS; QUENCHING; SEMICONDUCTOR DIODES;

AUGER EFFECT; ELECTRON INJECTION; PHOTOLUMINESCENCE QUENCHING;

PHOTOLUMINESCENCE;

EID: 0033181515     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00045-9     Document Type: Article

References (7)

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