Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation

Semiconductors

Volumn 33, Issue 8, 1999, Pages 821-823

  Barabanenkov, M Yu ^a   Leonov, A V ^a   Mordkovich, V N ^a   Omelyanovskaya, N M ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033177414     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187789     Document Type: Article

References (9)

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