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Volumn 38, Issue 8 B, 1999, Pages
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Rate equations for the creation of various metastable dangling bonds in a-Si:H mediated by floating bonds
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
DEGRADATION;
DIFFERENTIAL EQUATIONS;
ELECTRON ENERGY LEVELS;
IRRADIATION;
PHOTOLUMINESCENCE;
QUENCHING;
ANNIHILATION;
DANGLING BOND;
ELECTRON BEAM IRRADIATION;
FLOATING BOND;
HYDROGENATED AMORPHOUS SILICON;
RATE EQUATIONS;
STAEBLER-WRONSKI EFFECT;
AMORPHOUS SILICON;
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EID: 0033176784
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.l911 Document Type: Article |
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Times cited : (12)
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References (22)
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