Intrinsic polarised emission from InAs/GaAs(311)A quantum dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4676-4679

  Sanguinetti, S ^a   Castiglioni, S ^a   Grilli, E ^a   Guzzi, M ^a   Panzarini, G ^b   Andreani, L C ^b   Henini, M ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b UNIVERSITY OF PAVIA   (Italy)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

(311)A; InAs quantum dots; Photoluminescence; Polarisation; Self assembling

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; MOLECULES; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

INDIUM ARSENIDE; INTRINSIC POLARIZED EMISSION; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033175439     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4676     Document Type: Article

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