Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4780-4783

  Yokoi, Hideki ^a   Mizumoto, Tetsuya ^a   Shimizu, Masafumi ^a   Waniishi, Takashi ^a   Futakuchi, Naoki ^b   Kaida, Noriaki ^b   Nakano, Yoshiaki ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Contact angle; Garnet crystals; O2 plasma; Semiconductor; Wafer direct bonding

Indexed keywords

ANGLE MEASUREMENT; BONDING; CONTACT ANGLE; CRYSTALS; GARNETS; OXYGEN; PLASMA APPLICATIONS; SURFACE TREATMENT;

HYDROPHILICITY; OXYGEN PLASMA ACTIVATION PROCESS; WAFER DIRECT BONDING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033175345     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4780     Document Type: Article

References (4)

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