Large transmittance changes near the ultraviolet region observed on a laminated multilayer structure of Ga2O3 and in2O3 prepared by the pulsed laser deposition method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4802-4803

  Aoki, Takanori ^a   Suzuki, Akio ^a   Matsushita, Tatsuhiko ^a   Kaimi, Hideki ^a   Okuda, Masahiro ^a,b  

^a OSAKA SANGYO UNIVERSITY   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

Laminated structure of Ga2O3 and In2O3; Large transmittance changes; Optical recording film near ultraviolet region; PLD; Split target

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MULTILAYERS; OPTICAL RECORDING; PULSED LASER APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

FILM THICKNESS; LAMINATED MULTILAYER STRUCTURE; PULSED LASER DEPOSITION;

THIN FILMS;

EID: 0033175273     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4802     Document Type: Article

References (4)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto and H. Kiyoku: Appl. Phys. Lett. 70 (1997) 868.
2. P.Zu, Z. K.Tang, G. K. L.Wong, M. Kawasaki, A. Ohtomo, H. Koinuma and Y. Segawa: Solid State Commun. 103 (1997) 459.
3. D. M. Bagnall, Y. F. Chen, Z. Zhu and T. Yao: Appl. Phys. Lett. 70 (1997) 2230.
4. A. Suzuki, T. Matsushita, H. Yamanishi, D. Tanaka, T. Aoki and M. Okuda: Jpn. J. Appl. Phys. 35 (1996) L1603.