Collective resonance and form-factor of homogeneous broadening in semiconductors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4772-4774

  Zaitsev, Sergey V ^a,b   Gordeev, Nikita Yu ^a   Karachinsky, Leonid Ya ^a   Kopchatov, Vladimir I ^a   Novikov, Innokenty I ^a   Kop'ev, Peter S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b The University of Texas at Austin   (United States)

Author keywords

Collective resonance; Homogeneous linewidth; Lifetime of carriers; Radiative recombination; Superradiance

Indexed keywords

CHARGE CARRIERS; ELECTROLUMINESCENCE; ELECTRON RESONANCE; LIGHT EMISSION; NUMERICAL METHODS; RADIATION; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

COLLECTIVE RESONANCE; HOMOGENEOUS LINEWIDTH; LIFETIME OF CARRIERS; RADIATIVE RECOMBINATION; SUPERRADIANCE;

SEMICONDUCTOR MATERIALS;

EID: 0033175272     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4772     Document Type: Article

References (5)

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