Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1760-1767

  Williams, S C ^a   Kim, K W ^a   Littlejohn, M A ^a   Holton, W C ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONS; INTEGRATED CIRCUIT LAYOUT; MONTE CARLO METHODS; PERFORMANCE; RELIABILITY; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

DOUBLE GATE SILICON ON INSULATOR N-MOSFET; HOT ELECTRON INJECTION;

MOSFET DEVICES;

EID: 0033169512     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777167     Document Type: Article

References (20)