메뉴 건너뛰기




Volumn 38, Issue 7 B, 1999, Pages 4496-4499

Formation of diamond films by intermittent DC plasma chemical vapor deposition using subelectrode

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC DISCHARGES; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRODES; FILM PREPARATION; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACES; WAVEFORM ANALYSIS;

EID: 0033157533     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4496     Document Type: Article
Times cited : (4)

References (8)
  • 6
    • 0010160893 scopus 로고    scopus 로고
    • in Japanese
    • M. Noda: Oyo Buturi 65 (1996) 1258 [in Japanese].
    • (1996) Oyo Buturi , vol.65 , pp. 1258
    • Noda, M.1
  • 8
    • 0012586634 scopus 로고    scopus 로고
    • in Japanese
    • S. Samukawa: Oyo Buturi 66 (1997) 550 [in Japanese].
    • (1997) Oyo Buturi , vol.66 , pp. 550
    • Samukawa, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.