Structure of hydrogenated amorphous carbon deposited using saddle-field glow-discharge in methane

Journal of Non-Crystalline Solids

Volumn 249, Issue 1, 1999, Pages 69-79

  Sagnes, E ^a   Szurmak, J ^a   Manage, D ^a   Zukotynski, S ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DEPOSITION; ENERGY GAP; GLOW DISCHARGES; HYDROGEN; LIGHT ABSORPTION; LIGHT TRANSMISSION; METHANE; RAMAN SPECTROSCOPY; REFLECTION; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

DC SADDLE FIELD GLOW DISCHARGE; HYDROGENATED AMORPHOUS CARBON FILMS; INFRARED ABSORPTION; TAUC ENERGY GAP; URBACH ENERGY GAP;

AMORPHOUS FILMS;

EID: 0033154045     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00248-3     Document Type: Article

References (32)

1. Robertson J. J. Non-Cryst. Solids. 198:1996;615.
2. Hauser J.J. J. Non-Cryst. Solids. 23:1977;21.
3. Robertson J. Adv. Phys. 32:1983;361.
4. D. Gupta, Appl. Diam. Films Rel. Mater (NIST SP 885), 1995, p. 789.
5. A. Gangopadhyay, P.A. Willermet, M.A. Tamor, Appl. Diam. Films Rel. Mater (NIST SP 885), 1995, p. 703.
6. Pascual E., Serra C., Bertran E. J. Appl. Phys. 70:1991;5119.
7. Dasgupta D., Dimechelis F., Pirri C.F. Phys. Rev. B. 43:1991;2131.
8. Pelton M., O'Leary S.K., Gaspari F., Zukotynski S. J. Appl. Phys. 83:1998;1029.
9. Kruzelecky R.V., Zukotynski S., Ukah C.I., Gaspari F., Perz J.M. J. Vacuum Sci. Technol. A. 7:1989;2632.
10. Kruzelecky R.V., Racansky D., Zukotynski S., Gaspari F., Ukah C.I., Perz J.M. J. Non-Cryst. Solids. 108:1989;115.
11. Lascovich J.C., Giorgi R., Scaglione S. Appl. Surf. Sci. 47:1991;17.
12. O.S. Heavens, Optical Properties of Thin Solid Films, ch. 4, Academic Press, New York, 1955.
13. Savvides N. J. Appl. Phys. 58:1985;518.
14. F. Dimechelis, Physics and Applications of Amorphous Semiconductors, World Scientific, Singapore, 1990, p. 30.
15. McKenzie D.R. Philos. Mag. B. 48:1983;341.
16. N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials, Oxford, London, 1971, p. 240.
17. Robertson J. Philos. Mag. B. 66:1992;199.
18. Dischler B. E-MRS. 17:1987;189.
19. Sunil D., Vankar V.D., Chopra K.L. J. Mater. Eng. 12:1990;121.
20. Fujimoto F. Jpn. J. Phys. 23:1984;810.
21. Gielen J.W.A.M., Kleuskens P.R.M., van de Sanden M.C.M., van Ijzendoorn L.J., Schram D.C., Dekempeneer E.H.A., Menere J. J. Appl. Phys. 80:1996;5986.
22. Zou J.W., Schmidt K., Reichelt K., Dischler B. J. Appl. Phys. 67:1990;487.
23. Buuron A.J.M., van de Sanden M.C.M., van Ooij W.J., Driessens R.M.A., C Schram D. J. Appl. Phys. 78:1995;528.
24. Tamor M.A., Vassel W.C. J. Appl. Phys. 76:1994;3823.
25. Schwan J., Ulrich S., Batori V., Ehrhardt H., Silva S.R.P. J. Appl. Phys. 80:1996;440.
26. Cohen M. AIP Conf. Proc. 120:1984;371.
27. L. Ley, in: J.D. Joannopoulos, G. Lucovsky (Eds.), The Physics of Hydrogenated Amorphous Silicon II, vol. 56, Springer, Berlin, 1984, p. 61.
28. N.B. Colthup, Introduction to Infrared and Raman Spectroscopy, ch. 4, Academic Press, New York, 1990.
29. Robertson J. Phys. Rev. B. 35:1987;2946.
30. Bredas J.L., Street G.B. E-MRS. 17:1987;237.
31. Smith F.W. J. Appl. Phys. 55:1984;764.
32. N. Savvides, Mater. Sci. Forum 52 and 53 (1989) 407.