Spectroscopic studies in glassy semiconducting GexSe1-x

Vacuum

Volumn 53, Issue 3, 1999, Pages 415-419

  Fouad, S S ^a   Faek, S A ^b   El Sayed, S M ^b  

^a Ain Shams University   (Egypt)

^b NATIONAL CENTER FOR RADIATION RESEARCH AND TECHNOLOGY   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; BAND STRUCTURE; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; ENERGY GAP; GLASS TRANSITION; NUMERICAL ANALYSIS; SEMICONDUCTING GLASS; SPECTROSCOPY; STRUCTURE (COMPOSITION); VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

ATOMIC VOLUME; BAND GAP RELATION; GLASS FORMING ABILITY; LONE PAIR ELECTRONS; RADIAL DISTRIBUTION FUNCTION; TOPOLOGICAL BONDING STRUCTURE;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0033149401     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00463-1     Document Type: Article

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