Optical and electrical properties of vacuum evaporated In doped Se amorphous thin films

Vacuum

Volumn 53, Issue 3, 1999, Pages 447-450

  Fayek, S A ^a   Maged, A F ^a   Balboul, M R ^a  

^a NATIONAL CENTER FOR RADIATION RESEARCH AND TECHNOLOGY   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; BINDING ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; EVAPORATION; OPTICAL PROPERTIES; PROBES; SEMICONDUCTING SELENIUM; SEMICONDUCTOR DOPING; VACUUM APPLICATIONS;

COHESIVE ENERGY VALUES; INDIUM DOPED SELENIUM; SQUARE FOUR POINT PROBE; VACUUM EVAPORATION;

AMORPHOUS FILMS;

EID: 0033148394     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(99)00108-6     Document Type: Article

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