On the electrical properties and metallic transitions of nanocrystals Si under high pressure

Gaoya Wuli Xuebao/Chinese Journal of High Pressure Physics

Volumn 13, Issue 2, 1999, Pages 133-137

  Bao, Zhongxing ^a   He, Yuliang ^a   Wang, Weixiang ^a   Liu, Cuixia ^a   Cheng, Wei ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; NANOSTRUCTURED MATERIALS; SILICON;

METALLIC TRANSITION; SILICON NANOCRYSTALS;

HIGH PRESSURE EFFECTS;

EID: 0033140516     PISSN: 10005773     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)