Scaling of silicon trench etch rates and profiles in plasma etching

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 315-318

  Lukichev, V F ^a   Yunkin, V A ^b  

^a Institute of Physics and Technology of the Russian Academy of Sciences   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; PLASMA ETCHING; REACTIVE ION ETCHING;

TRENCH ETCH RATES;

SEMICONDUCTING SILICON;

EID: 0033133117     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00093-3     Document Type: Article

References (3)

1. 1. R.A Gottscho, C.W. Jurgensen, D.J. Vitkavage, J. Vac. Sci. Technol. B, 10 (1992) 2133.
2. 2. V.A. Yunkin, V.F. Lukichev, K.V. Rudenko, D. Fischer, E. Voges, Microelectronic. Eng., 30 (1995) 345.
3. 3. V.K. Singh, E.S.G. Shaqfeh, J.P. McVittie, J. Vac. Sci. Technol. B, 10 (1992) 1091.