Shadow evaporation method for fabrication of sub 10 nm gaps between metal electrodes

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 157-160

  Philipp, G ^a   Weimann, T ^b   Hinze, P ^b   Burghard, M ^a   Weis, J ^a  

^a University of Tübingen and International Max Planck Research School for Intelligent Systems   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

METAL ELECTRODES; SHADOW EVAPORATION METHODS;

ULTRATHIN FILMS;

EID: 0033132508     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00052-0     Document Type: Article

References (4)

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3. 3. Bezryadin, A. and Dekker, C.:J. Vac. Sci. Technol. B, 15, 793, (1997)
4. 4. Jacobs, J. W. M. and Verhoeven, J. F. C. M.:J. Microscopy, 143, 103, (1986)