Design considerations for low damage process plasmas

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 299-302

  Rahman, M ^a   Deng, L G ^a   Boyd, A ^a   Ribayrol, A ^a   Wilkinson, C D W ^a   Van Den Berg, J A ^b   Armour, D G ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; ION IMPLANTATION; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

MOLECULAR IONS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033131705     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00086-6     Document Type: Article

References (18)

1. 1. S. K. Murad, M. Rahman, N. Johnson, S. Thoms, S. P. Beaumont, and C. D. W. Wilkinson, J. Vac. Sci. Technol. B 14, 3658 (1996); S. K. Murad, Ph.D. Thesis, University of Glasgow, 1994 (unpublished).
2. 1. S. K. Murad, M. Rahman, N. Johnson, S. Thoms, S. P. Beaumont, and C. D. W. Wilkinson, J. Vac. Sci. Technol. B 14, 3658 (1996); S. K. Murad, Ph.D. Thesis, University of Glasgow, 1994 (unpublished).
3. 2. R. Germann, A. Forchel, M. Bresch, and H.P. Meier, J. Vac. Sci. Technol. B 7, 1475 (1989).
4. 3. N. G. Stoffel, J. Vac. Sci. Technol. B 10, 651 (1992).
5. 4. N. G. Stoffel, S. A. Schwartz, M. A. A. Pudensi, K. Kash, L. T. Florez, J. P. Harbison, and B. J. Wilkens, Appl. Phys. Lett. 60, 1603 (1992).
6. 5. C. H. Chen, D. L. Green, and E. L. Hu, J. Vac. Sci. Technol. B 13, 2355 (1995).
7. 6. D. L. Green, E. L. Hu, and N. G. Stoffel, J. Vac. Sci. Technol. B 12, 3311 (1994).
8. 7. M. Rahman, J. Appl. Phys. 82, 2215 (1997).
9. 8. H. F. Wong, D. L. Green, T. Y. Liu, D. G. Lishan, M. Bellis, E. L. Hu, P. M. Petroff, P. O. Holt, and J. L. Merz, J. Vac. Sci. Technol. B 6, 1906 (1988).
10. 9. L. G. Deng, M. Rahman, S. K. Murad, A. Boyd, and C. D. W. Wilkinson, J. Vac. Sci. Technol. B (to appear).
11. 10. K. G. Orrmann-Rossiter, A. H. Al-Bayati, D. G. Armour, S. E. Donelly, and J. A. van den Berg, Nucl. Instr. Meth. B 59/60, 1991 (1991).
12. 11. S. K. Murad, S. P. Beaumont, M. C. Holland, and C. D. W. Wilkinson, J. Vac. Sci. Technol. B 13, 2344 (1995).
13. 12. M. Rahman, N. P. Johnson, M. A. Foad, M. C. Holland, and C. D. W. Wilkinson, Appl. Phys. Lett. 61, 2335 (1992); M. Rahman, M. A. Foad, S. Hicks, M. C. Holland, and C. D. W. Wilkinson, Mat. Res. Soc. Symp. Proc. 279, 775 (1993)
14. 12. M. Rahman, N. P. Johnson, M. A. Foad, M. C. Holland, and C. D. W. Wilkinson, Appl. Phys. Lett. 61, 2335 (1992); M. Rahman, M. A. Foad, S. Hicks, M. C. Holland, and C. D. W. Wilkinson, Mat. Res. Soc. Symp. Proc. 279, 775 (1993)
15. 13. Handbook of Physics and Chemistry, edited by D. R. Lide (CRC Press, Boca Raton, 1993).
16. 14. Y. Hirayama, Y. Suzuki, and H. Okamoto, Jpn. J. Appl. Phys. 24, 1498 (1985); S. A. Schwarz, T. Venkatesan, D. M. Hwang, H. W. Yoon, R. Bhat, and Y. Arakawa, Appl. Phys. Lett. 50, 281 (1987).
17. 14. Y. Hirayama, Y. Suzuki, and H. Okamoto, Jpn. J. Appl. Phys. 24, 1498 (1985); S. A. Schwarz, T. Venkatesan, D. M. Hwang, H. W. Yoon, R. Bhat, and Y. Arakawa, Appl. Phys. Lett. 50, 281 (1987).
18. 15. B. N. Chapman, Glow Discharge Processes (Wiley-Interscience, New York, 1988).