Pre-structuring of silicon substrates to investigate MBE-growth of SiGe layers

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 275-278

  David, C ^a   Hartmann, R ^a   Gennser, U ^a   Muller E ^a   Grutzmacher D ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELECTRON BEAM LITHOGRAPHY; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

SILICON GERMANIDE;

SILICON WAFERS;

EID: 0033131675     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00080-5     Document Type: Article

References (5)

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3. 3. L. Vescan et al.; Semicond. Sci. Technol., Vol.9,no.4 (1994); p. 387-91
4. 4. P.J.C. King et al.; Appl. Phys. Let., Vol.67, no.24, (1995), p. 3566-8
5. 5. E. Müller et al.; Thin Solid Films (accepted for publication)