Computation of reflected images from EUV masks

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 443-447

  Bollepalli, Srinivas B ^a   Cerrina, Franco ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; LIGHT ABSORPTION; LIGHT REFLECTION; MULTILAYERS; PHOTOLITHOGRAPHY;

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY;

MASKS;

EID: 0033130814     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00032-5     Document Type: Article

References (10)

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4. [4] Born M., Wolf E., Principles Of Optics, Pergamon 1980.
5. [5] Paris D. T, Hurd F. K, Basic Electromagnetic Theory, McGraw-Hill Inc., 1969.
6. [6] E. Lalor, Conditions for the Validity of the Angular Spectrum of Plane Waves, JOSA, 58, 1235 (1968)
7. [7] Henke B. L., Gullikson E. M. & Davis J. C., X-ray interactions : photoabsorption, scattering, transmission, and reflection at E ≈ 50-30000 eV, Z = 1-92, Atomic Data and Nuclear Data Tables, July 1993, 54, (no. 2): pp 181-342.
8. [8] B. S. Bollepalli, M. Khan, F. Cerrina, Image Formation in Layered Structures : Application to X-ray Lithography, MSM Conference Proceedings, Santa Clara, 1998.
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10. [10] Stratton J. A, Electromagnetic Theory, McGraw-Hill Book Company, New York (1941).