Finite element and monte carlo simulation of submicrometer Silicon n-MOSFET's

IEEE Transactions on Magnetics

Volumn 35, Issue 3 PART 1, 1999, Pages 1809-1812

  Hadji, D ^a   Marechal Y ^a   Zimmermann, J ^b  

^a ENSIEG   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

Carrier transport equation; Finite Element method; Monte Carlo method; MOS devices; Poisson's equation

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THREE DIMENSIONAL;

CARRIER TRANSPORT EQUATION; POISSON EQUATION;

MOSFET DEVICES;

EID: 0033121676     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.767383     Document Type: Article

References (7)

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